Characterization of RF substrate noise isolation and bandgap reference voltage of 0.18 um CMOS
THS TK7874.75.I92 2005
Saved in:
Main Author: | Izahan Syemylona Ishak |
---|---|
Format: | text::Thesis |
Language: | English |
Published: |
2023
|
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
RF substrate noise characterization for CMOS 0.18?m
by: Ishak I.S., et al.
Published: (2023) -
RF substrate noise characterization for CMOS 0.18μm
by: Ishak, I.S., et al.
Published: (2017) -
Design And Simulation Of Cmos-Based Bandgap Reference Voltage With Compensation Circuit Using 0.18 Μm Process Technology
by: Chan, Mun kit
Published: (2017) -
Design And Simulation Of Cmos-Based Low Voltage Variation Bandgap Reference Voltage Circuitry Using 0.18μm Process Technology
by: Tan, Chee Yong
Published: (2015) -
Design of a low voltage 0.18 um CMOS Surface Acoustic Wave gas sensor
by: Moghavvemi, M., et al.
Published: (2011)