Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator

• Main Author: Kho, Elizabeth Ching Tee
• Format: Thesis
• Language: English
• Published: Universiti Malaysia Sarawak (UNIMAS) 2014
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://ir.unimas.my/id/eprint/14281/1/Elizabeth.pdf; http://ir.unimas.my/id/eprint/14281/

Lateral insulated-gate bipolar transistors (LIGBTs) have long been proposed for use in integrated Power Integrated Circuits (PICs). LIGBTs can be fabricated on either bulk silicon substrate or silicon-on-insulator (SOl). The later have been favored by most Integrated PICs due to its superior isol...