Methods to Suppress Earlier Leakage in 200V Superjunction LIGBT on Partial SOI

• Main Authors: Kho Ching Tee, Elizabeth, Alexander, Hölke, Steven John, Pilkington, Deb Kumar, Pal, Ng, Liang Yew, Wan Azlan, Bin Wan Zainal Abidin, Marina, Antoniou, Florin, Udrea
• Format: E-Article
• Published: ENCON 2013 2013
• Subjects: Q Science (General)
• Online Access: http://ir.unimas.my/id/eprint/8166/; http://rpsonline.com.sg/proceedings/9789810760595/html/024.xml

For most devices fabricated on SOI wafer, there is a consideration of backside coupling effect. This phenomenon becomes catastrophic if the device fabricated on the SOI wafer is an IGBT which consists of n-p-n-p structure and employs both the partial SOI and DTI technique. Earlier leakage had been f...