Simulation and Study of an Insulated Gate Bipolar Transistor (IGBT) for Medium Power Application

• Main Author: Mohamad@Hamid, Mohd Khairun Affandy
• Format: Final Year Project
• Language: English
• Published: Universiti Teknologi PETRONAS 2007
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://utpedia.utp.edu.my/9618/1/2007%20-%20Simulation%20and%20Study%20of%20an%20Insulated%20Gate%20Bipolar%20Transistor%28IGBT%29%20for%20Medium%20Power%20Applic.pdf; http://utpedia.utp.edu.my/9618/

Insulated Gate Bipolar Transistor (IGBT) is one of the switching devices which is widely use in medium power application. IGBT provide the characteristic of almost ideal switch for very high voltage and current level. The advantage of IGBT is that is uses the high current density bipolar applicat...