صورة الغلاف

Numerical simulations of innovative ground plane and double-gate configurations in thin-body and -buried oxide of SOI MOSFETS

Doctor of Philosophy in Microelectronic Engineering

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Noraini, Othman
مؤلفون آخرون:	Mohd Khairuddin, Md Arshad, Assoc. Prof. Ir. Dr.
التنسيق:	أطروحة
اللغة:	English
منشور في:	Universiti Malaysia Perlis (UniMAP) 2017
الموضوعات:	Metal oxide semiconductors, Complementary Electric insulators and insulation Metal oxide semiconductor field-effect transistors Silicon-on-insulator (SOI)
الوصول للمادة أونلاين:	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77998
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

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