Numerical simulations of innovative ground plane and double-gate configurations in thin-body and -buried oxide of SOI MOSFETS

• المؤلف الرئيسي: Noraini, Othman
• مؤلفون آخرون: Mohd Khairuddin, Md Arshad, Assoc. Prof. Ir. Dr.
• التنسيق: أطروحة
• اللغة: English
• منشور في: Universiti Malaysia Perlis (UniMAP) 2017
• الموضوعات: Metal oxide semiconductors, Complementary; Electric insulators and insulation; Metal oxide semiconductor field-effect transistors; Silicon-on-insulator (SOI)
• الوصول للمادة أونلاين: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77998

Doctor of Philosophy in Microelectronic Engineering