Numerical simulations of innovative ground plane and double-gate configurations in thin-body and -buried oxide of SOI MOSFETS

Doctor of Philosophy in Microelectronic Engineering

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Bibliographic Details
Main Author: Noraini, Othman
Other Authors: Mohd Khairuddin, Md Arshad, Assoc. Prof. Ir. Dr.
Format: Thesis
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2017
Subjects:
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/77998
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