Modeling of tunneling current of electron in Bilayer Armchair Graphene Nanoribbons P-N junction diode using transfer matrix method

• Main Authors: Intan, Anjaningsih, M., Fulki Fadhillah, Lilik, Hasanah, Endi, Suhendi
• Other Authors: [e-mail]
• Format: Article
• Language: English
• Published: Universiti Malaysia Perlis 2020
• Subjects: Tunneling current; P-N junction diode; BAGNR; TMM
• Online Access: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/63957

Link to publisher's homepage at https://ijneam.unimap.edu.my/