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Modeling of tunneling current of electron in Bilayer Armchair Graphene Nanoribbons P-N junction diode using transfer matrix method

Link to publisher's homepage at https://ijneam.unimap.edu.my/

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Bibliographic Details
Main Authors: Intan, Anjaningsih, M., Fulki Fadhillah, Lilik, Hasanah, Endi, Suhendi
Other Authors: endis@upi.edu
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2020
Subjects:
Tunneling current
P-N junction diode
BAGNR
TMM
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/63957
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spelling my.unimap-639572020-02-11T03:08:22Z Modeling of tunneling current of electron in Bilayer Armchair Graphene Nanoribbons P-N junction diode using transfer matrix method Intan, Anjaningsih M., Fulki Fadhillah Lilik, Hasanah Endi, Suhendi endis@upi.edu Tunneling current P-N junction diode BAGNR TMM Link to publisher's homepage at https://ijneam.unimap.edu.my/ The tunneling current in the P-N junction diode Bilayer Armchair Graphene Nanoribbons (BAGNR) was calculated. The tunneling current was obtained by solving the Schrödinger equation to find out the electron transmittance through a potential barrier by using the Transfer Matrix Method (TMM). The tunneling current was calculated for various variables such as bias voltage, BAGNR width, electric field, and temperature. It is found that the tunneling current increases with the increasing bias voltage. Furthermore, the tunneling current of electron increases with the increasing BAGNR width or the applied electric field, otherwise it decreases with the increasing temperature. The tunneling current of P-N junction diode BAGNR generated approximately 4.8 μA with 1 MV/cm electric field and a bias voltage of 100 mV. Then, the calculation of tunneling current of BAGNR was also compared with Monolayer Armchair Graphene Nanoribbons (MAGNR). By using BAGNR, the tunneling current produced is three times greater than using MAGNR. In addition, the tunneling current using TMM is then compared with the Wantzel-Kramers-Brillouin (WKB) method and shows that these two methods produce the same value at a low voltage below 30 mV, while at high voltages, MMT always has a higher value. 2020-02-11T03:08:22Z 2020-02-11T03:08:22Z 2020-01 Article International Journal of Nanoelectronics and Materials, vol.13(1), 2020, pages 81-90. 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/63957 https://ijneam.unimap.edu.my/ en Universiti Malaysia Perlis
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Tunneling current
P-N junction diode
BAGNR
TMM
spellingShingle Tunneling current
P-N junction diode
BAGNR
TMM
Intan, Anjaningsih
M., Fulki Fadhillah
Lilik, Hasanah
Endi, Suhendi
Modeling of tunneling current of electron in Bilayer Armchair Graphene Nanoribbons P-N junction diode using transfer matrix method
description Link to publisher's homepage at https://ijneam.unimap.edu.my/
author2 endis@upi.edu
author_facet endis@upi.edu
Intan, Anjaningsih
M., Fulki Fadhillah
Lilik, Hasanah
Endi, Suhendi
format Article
author Intan, Anjaningsih
M., Fulki Fadhillah
Lilik, Hasanah
Endi, Suhendi
author_sort Intan, Anjaningsih
title Modeling of tunneling current of electron in Bilayer Armchair Graphene Nanoribbons P-N junction diode using transfer matrix method
title_short Modeling of tunneling current of electron in Bilayer Armchair Graphene Nanoribbons P-N junction diode using transfer matrix method
title_full Modeling of tunneling current of electron in Bilayer Armchair Graphene Nanoribbons P-N junction diode using transfer matrix method
title_fullStr Modeling of tunneling current of electron in Bilayer Armchair Graphene Nanoribbons P-N junction diode using transfer matrix method
title_full_unstemmed Modeling of tunneling current of electron in Bilayer Armchair Graphene Nanoribbons P-N junction diode using transfer matrix method
title_sort modeling of tunneling current of electron in bilayer armchair graphene nanoribbons p-n junction diode using transfer matrix method
publisher Universiti Malaysia Perlis
publishDate 2020
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/63957
_version_ 1670805859432660992
score 13.214268

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