Description: Modeling of tunneling current of electron in Bilayer Armchair Graphene Nanoribbons P-N junction diode using transfer matrix method

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Bibliographic Details
Main Authors:	Intan, Anjaningsih, M., Fulki Fadhillah, Lilik, Hasanah, Endi, Suhendi
Other Authors:	endis@upi.edu
Format:	Article
Language:	English
Published:	Universiti Malaysia Perlis 2020
Subjects:	Tunneling current P-N junction diode BAGNR TMM
Online Access:	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/63957
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Summary:	Link to publisher's homepage at https://ijneam.unimap.edu.my/