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Numerical Simulation and Comparative Assessment of DG-HEMT Device for High-frequency Application

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Main Authors: Abdelmalik Belarbi, Abdelkader Hamdoune
Other Authors: belarbiabdelmalik@yahoo.fr
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2019
Subjects:
GaN
InGaN
AlGaN
DG-HEMT
DC Performances
AC Performances
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/58778
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spelling my.unimap-587782019-03-06T09:52:09Z Numerical Simulation and Comparative Assessment of DG-HEMT Device for High-frequency Application Abdelmalik Belarbi Abdelkader Hamdoune belarbiabdelmalik@yahoo.fr GaN InGaN AlGaN DG-HEMT DC Performances AC Performances Link to publisher's homepage at http://ijneam.unimap.edu.my The main objective of this paper is to investigate the DC and AC performances of GaN/InGaN/GaN Double Gate High Electron Mobility Transistor (DG-HEMT) based on innovative materials III-V in particular III-N materials (Nitride Materials) by using SILVACO TCAD device simulator. First, the structure was modelled with optimized physical and geometrical parameters. Secondly, the DC and AC performances were investigated. Findings indicate that the device offers a maximum drain current of 1.6 A/mm, a threshold voltage of -2.2 V, a maximum transconductance of 0.8 S mm-1, a Ion/Ioff ration of 1010, a Drain Induced Barrier Lowering (DIBL) of 37 mV/V, a Sub-threshold Swing (SS) of 75 mV/dec and a Gate-leakage of 1.10-12 A. In terms of AC performances, the device exhibits a cut-off frequency (Ft) of 990 GHz and a maximum oscillation frequency (Fmax) of 2 THz. Finally, a comparison study was carried out with a recent state of the art. 2019-03-06T09:52:09Z 2019-03-06T09:52:09Z 2019-01 Article International Journal of Nanoelectronics and Materials, vol.12(1), 2019, pages 93-104 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/58778 en Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic GaN
InGaN
AlGaN
DG-HEMT
DC Performances
AC Performances
spellingShingle GaN
InGaN
AlGaN
DG-HEMT
DC Performances
AC Performances
Abdelmalik Belarbi
Abdelkader Hamdoune
Numerical Simulation and Comparative Assessment of DG-HEMT Device for High-frequency Application
description Link to publisher's homepage at http://ijneam.unimap.edu.my
author2 belarbiabdelmalik@yahoo.fr
author_facet belarbiabdelmalik@yahoo.fr
Abdelmalik Belarbi
Abdelkader Hamdoune
format Article
author Abdelmalik Belarbi
Abdelkader Hamdoune
author_sort Abdelmalik Belarbi
title Numerical Simulation and Comparative Assessment of DG-HEMT Device for High-frequency Application
title_short Numerical Simulation and Comparative Assessment of DG-HEMT Device for High-frequency Application
title_full Numerical Simulation and Comparative Assessment of DG-HEMT Device for High-frequency Application
title_fullStr Numerical Simulation and Comparative Assessment of DG-HEMT Device for High-frequency Application
title_full_unstemmed Numerical Simulation and Comparative Assessment of DG-HEMT Device for High-frequency Application
title_sort numerical simulation and comparative assessment of dg-hemt device for high-frequency application
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2019
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/58778
_version_ 1643805992447639552
score 13.214268

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