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Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous

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Main Authors: Retnasamy, Vithyacharan, Zaliman, Sauli, Dr., Aaron, Koay Terr Yeow, Goh, Siew Chui, Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr.
Other Authors: vc.sundress@gmail.com
Format: Article
Language:English
Published: AENSI Publisher All rights reserved 2014
Subjects:
Contact angle
DOE
Platinum
RIE
Wetability
Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/35122
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spelling my.unimap-351222014-06-05T09:03:30Z Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous Retnasamy, Vithyacharan Zaliman, Sauli, Dr. Aaron, Koay Terr Yeow Goh, Siew Chui Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr. vc.sundress@gmail.com zaliman@unimap.edu.my vc@unimap.edu.my Contact angle DOE Platinum RIE Wetability Link to publisher's homepage at http://www.aensiweb.com/ Wettability in microfluidic has direct influence to its fluid flow channels. This paper investigates the variable parameters that affect the wetability in terms of contact angle on a Platinum deposited wafer after reactive ion etching (RIE). A total of four controllable process variables, with 16 sets of experiments were scrutinized using a designed design of experiment (DOE). The four variables in the investigation are ICP power, Bias power, working pressure, and type of gaseous used. The result suggests that the type of gaseous is the most significant effect contributing to the contact angle values where SF6+Ar gives higher values of contact angle compared to CF4+Ar gas. All the experiments produced the contact angle greater than 90° and are included in hydrophilic category. 2014-06-05T09:03:30Z 2014-06-05T09:03:30Z 2013-10 Article Advances in Environmental Biology, vol. 7(SPEC. ISSUE 12), 2013, pages 3654-3659 1995-0756 http://www.aensiweb.com/old/aeb_October-special_2013.html http://dspace.unimap.edu.my:80/dspace/handle/123456789/35122 en AENSI Publisher All rights reserved
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Contact angle
DOE
Platinum
RIE
Wetability
spellingShingle Contact angle
DOE
Platinum
RIE
Wetability
Retnasamy, Vithyacharan
Zaliman, Sauli, Dr.
Aaron, Koay Terr Yeow
Goh, Siew Chui
Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr.
Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous
description Link to publisher's homepage at http://www.aensiweb.com/
author2 vc.sundress@gmail.com
author_facet vc.sundress@gmail.com
Retnasamy, Vithyacharan
Zaliman, Sauli, Dr.
Aaron, Koay Terr Yeow
Goh, Siew Chui
Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr.
format Article
author Retnasamy, Vithyacharan
Zaliman, Sauli, Dr.
Aaron, Koay Terr Yeow
Goh, Siew Chui
Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr.
author_sort Retnasamy, Vithyacharan
title Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous
title_short Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous
title_full Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous
title_fullStr Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous
title_full_unstemmed Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6+argon/CF4+argon gaseous
title_sort wettability analysis on platinum deposited wafer after reactive ion ecthing using sf6+argon/cf4+argon gaseous
publisher AENSI Publisher All rights reserved
publishDate 2014
url http://dspace.unimap.edu.my:80/dspace/handle/123456789/35122
_version_ 1643797713056169984
score 13.214268

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