Interaction relationship analysis of surface roughness on aluminium etched wafer using RIE

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Main Authors: Zaliman, Sauli, Dr., Retnasamy, Vithyacharan, Aaron, Koay Terr Yeow, Wei Wei, Ng
Other Authors: vc.sundres@gmail.com
Format: Article
Language:English
Published: Trans Tech Publications 2014
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Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/33660
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spelling my.unimap-336602014-04-13T07:13:46Z Interaction relationship analysis of surface roughness on aluminium etched wafer using RIE Zaliman, Sauli, Dr. Retnasamy, Vithyacharan Aaron, Koay Terr Yeow Wei Wei, Ng vc.sundres@gmail.com Aluminum Design of experiment (DOE) Reactive Ion Etching (RIE) Surface roughness Link to publisher's homepage at http://www.ttp.net/ This paper presents the interaction relationships between Tetrafluoromethane (CF₄) gas, Oxygen (O₂) gas, and RF power in response to the surface roughness of an Aluminium deposited wafer after being etched using Reactive Ion Etching (RIE). The investigation was done using the three factors full factorial design of experiment (DOE). Analysis was done qualitatively by plotting the main interaction plots. The results suggest that strong interactions are present between CFv and RF power, CF₄ and O₂, and also O₂ and RF power due to the intersection of the graphs. This implies that all three factors have interaction between each other towards the surface roughness on the deposited Aluminium after RIE. 2014-04-13T07:13:46Z 2014-04-13T07:13:46Z 2014 Article Applied Mechanics and Materials, vol.487, 2014, pages 214-217 1662-7482 http://dspace.unimap.edu.my:80/dspace/handle/123456789/33660 http://www.scientific.net/AMM.487.214 10.4028/www.scientific.net/AMM.487.214 en Trans Tech Publications
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Aluminum
Design of experiment (DOE)
Reactive Ion Etching (RIE)
Surface roughness
spellingShingle Aluminum
Design of experiment (DOE)
Reactive Ion Etching (RIE)
Surface roughness
Zaliman, Sauli, Dr.
Retnasamy, Vithyacharan
Aaron, Koay Terr Yeow
Wei Wei, Ng
Interaction relationship analysis of surface roughness on aluminium etched wafer using RIE
description Link to publisher's homepage at http://www.ttp.net/
author2 vc.sundres@gmail.com
author_facet vc.sundres@gmail.com
Zaliman, Sauli, Dr.
Retnasamy, Vithyacharan
Aaron, Koay Terr Yeow
Wei Wei, Ng
format Article
author Zaliman, Sauli, Dr.
Retnasamy, Vithyacharan
Aaron, Koay Terr Yeow
Wei Wei, Ng
author_sort Zaliman, Sauli, Dr.
title Interaction relationship analysis of surface roughness on aluminium etched wafer using RIE
title_short Interaction relationship analysis of surface roughness on aluminium etched wafer using RIE
title_full Interaction relationship analysis of surface roughness on aluminium etched wafer using RIE
title_fullStr Interaction relationship analysis of surface roughness on aluminium etched wafer using RIE
title_full_unstemmed Interaction relationship analysis of surface roughness on aluminium etched wafer using RIE
title_sort interaction relationship analysis of surface roughness on aluminium etched wafer using rie
publisher Trans Tech Publications
publishDate 2014
url http://dspace.unimap.edu.my:80/dspace/handle/123456789/33660
_version_ 1643797244537733120
score 13.214268