Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer

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Main Authors: Zaliman, Sauli, Dr., Retnasamy, Vithyacharan, Aaron, Koay Terr Yeow, Siew Chui, Goh, Khairul Anwar, Mohamad Khazali, Nooraihan, Abdullah
Other Authors: zaliman@unimap.edu.my
Format: Article
Language:English
Published: Trans Tech Publications 2014
Subjects:
DOE
Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/33657
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spelling my.unimap-336572014-04-13T04:28:33Z Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer Zaliman, Sauli, Dr. Retnasamy, Vithyacharan Aaron, Koay Terr Yeow Siew Chui, Goh Khairul Anwar, Mohamad Khazali Nooraihan, Abdullah zaliman@unimap.edu.my CF₄+Argon DOE Platinum Reactive Ion Etching (RIE) Surface roughness Link to publisher's homepage at http://www.ttp.net/ Aluminium metallization has a disadvantage when it comes to high-end applications as it cannot withstand the high temperature and pressure. This paper studies the factors that affect the surface roughness on a Platinum deposited wafer after reactive ion etching (RIE) using a combination of CF₄ and Argon gaseous. A total of three controllable process variables, with 8 sets of experiments were scrutinized using a systematically designed design of experiment (DOE). The three variables in the investigation are ICP power, Bias power, and working pressure. The estimate of the effect calculated for ICP power, Bias power, and working pressure are-6.3608, -3.2858, and-5.394 respectively. All three factors gave negative effects. This implies that the surface roughness decreases when ICP power, Bias power, and working pressure is high. The ICP Power is the most influential factor followed by working pressure, and bias power. 2014-04-13T04:28:33Z 2014-04-13T04:28:33Z 2014 Article Applied Mechanics and Materials, vol.487, 2014, pages 71-74 1662-7482 http://dspace.unimap.edu.my:80/dspace/handle/123456789/33657 http://www.scientific.net/AMM.487.71 10.4028/www.scientific.net/AMM.487.71 en Trans Tech Publications
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic CF₄+Argon
DOE
Platinum
Reactive Ion Etching (RIE)
Surface roughness
spellingShingle CF₄+Argon
DOE
Platinum
Reactive Ion Etching (RIE)
Surface roughness
Zaliman, Sauli, Dr.
Retnasamy, Vithyacharan
Aaron, Koay Terr Yeow
Siew Chui, Goh
Khairul Anwar, Mohamad Khazali
Nooraihan, Abdullah
Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer
description Link to publisher's homepage at http://www.ttp.net/
author2 zaliman@unimap.edu.my
author_facet zaliman@unimap.edu.my
Zaliman, Sauli, Dr.
Retnasamy, Vithyacharan
Aaron, Koay Terr Yeow
Siew Chui, Goh
Khairul Anwar, Mohamad Khazali
Nooraihan, Abdullah
format Article
author Zaliman, Sauli, Dr.
Retnasamy, Vithyacharan
Aaron, Koay Terr Yeow
Siew Chui, Goh
Khairul Anwar, Mohamad Khazali
Nooraihan, Abdullah
author_sort Zaliman, Sauli, Dr.
title Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer
title_short Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer
title_full Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer
title_fullStr Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer
title_full_unstemmed Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer
title_sort surface roughness scrutinizaton with rie cf₄+argon gaseous on platinum deposited wafer
publisher Trans Tech Publications
publishDate 2014
url http://dspace.unimap.edu.my:80/dspace/handle/123456789/33657
_version_ 1643797243647492096
score 13.214268