Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer
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my.unimap-336572014-04-13T04:28:33Z Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer Zaliman, Sauli, Dr. Retnasamy, Vithyacharan Aaron, Koay Terr Yeow Siew Chui, Goh Khairul Anwar, Mohamad Khazali Nooraihan, Abdullah zaliman@unimap.edu.my CF₄+Argon DOE Platinum Reactive Ion Etching (RIE) Surface roughness Link to publisher's homepage at http://www.ttp.net/ Aluminium metallization has a disadvantage when it comes to high-end applications as it cannot withstand the high temperature and pressure. This paper studies the factors that affect the surface roughness on a Platinum deposited wafer after reactive ion etching (RIE) using a combination of CF₄ and Argon gaseous. A total of three controllable process variables, with 8 sets of experiments were scrutinized using a systematically designed design of experiment (DOE). The three variables in the investigation are ICP power, Bias power, and working pressure. The estimate of the effect calculated for ICP power, Bias power, and working pressure are-6.3608, -3.2858, and-5.394 respectively. All three factors gave negative effects. This implies that the surface roughness decreases when ICP power, Bias power, and working pressure is high. The ICP Power is the most influential factor followed by working pressure, and bias power. 2014-04-13T04:28:33Z 2014-04-13T04:28:33Z 2014 Article Applied Mechanics and Materials, vol.487, 2014, pages 71-74 1662-7482 http://dspace.unimap.edu.my:80/dspace/handle/123456789/33657 http://www.scientific.net/AMM.487.71 10.4028/www.scientific.net/AMM.487.71 en Trans Tech Publications |
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CF₄+Argon DOE Platinum Reactive Ion Etching (RIE) Surface roughness |
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CF₄+Argon DOE Platinum Reactive Ion Etching (RIE) Surface roughness Zaliman, Sauli, Dr. Retnasamy, Vithyacharan Aaron, Koay Terr Yeow Siew Chui, Goh Khairul Anwar, Mohamad Khazali Nooraihan, Abdullah Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer |
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zaliman@unimap.edu.my |
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zaliman@unimap.edu.my Zaliman, Sauli, Dr. Retnasamy, Vithyacharan Aaron, Koay Terr Yeow Siew Chui, Goh Khairul Anwar, Mohamad Khazali Nooraihan, Abdullah |
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Article |
author |
Zaliman, Sauli, Dr. Retnasamy, Vithyacharan Aaron, Koay Terr Yeow Siew Chui, Goh Khairul Anwar, Mohamad Khazali Nooraihan, Abdullah |
author_sort |
Zaliman, Sauli, Dr. |
title |
Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer |
title_short |
Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer |
title_full |
Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer |
title_fullStr |
Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer |
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Surface roughness scrutinizaton with RIE CF₄+Argon gaseous on platinum deposited wafer |
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surface roughness scrutinizaton with rie cf₄+argon gaseous on platinum deposited wafer |
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Trans Tech Publications |
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2014 |
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http://dspace.unimap.edu.my:80/dspace/handle/123456789/33657 |
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1643797243647492096 |
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13.214268 |