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Investigation of surface roughness on platinum deposited wafer after reactive ion etching using SF₆+Argon gaseous

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Main Authors: Zaliman, Sauli, Dr., Retnasamy, Vithyacharan, Aaron, Koay Terr Yeow, Siew Chui, Goh, Khairul Anwar, Mohamad Khazali, Nooraihan, Abdullah
Other Authors: zaliman@unimap.edu.my
Format: Article
Language:English
Published: Trans Tech Publications 2014
Subjects:
DOE
Platinum
Reactive Ion Etching (RIE)
SF₆+Argon
Surface roughness
Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/33656
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spelling my.unimap-336562014-04-13T04:18:07Z Investigation of surface roughness on platinum deposited wafer after reactive ion etching using SF₆+Argon gaseous Zaliman, Sauli, Dr. Retnasamy, Vithyacharan Aaron, Koay Terr Yeow Siew Chui, Goh Khairul Anwar, Mohamad Khazali Nooraihan, Abdullah zaliman@unimap.edu.my DOE Platinum Reactive Ion Etching (RIE) SF₆+Argon Surface roughness Link to publisher's homepage at http://www.ttp.net/ This paper investigates the factors that affect the surface roughness on a Platinum deposited wafer after reactive ion etching (RIE) using a combination of SF₆ and Argon gaseous. A total of three controllable process variables, with 8 sets of experiments were scrutinized using a systematically designed design of experiment (DOE). The three variables in the investigation are ICP power, Bias power, and working pressure. The estimate of the effect calculated for ICP power, Bias power, and working pressure are-4.9288, -6.2383, and-4.7223 respectively. All three factors gave negative effects. This implies that the surface roughness decreases when ICP power, Bias power, and working pressure is high. The Bias Power is the most influential factor followed by ICP Power, and working pressure. 2014-04-13T04:18:07Z 2014-04-13T04:18:07Z 2014 Article Applied Mechanics and Materials, vol.487, 2014, pages 210-213 1662-7482 http://dspace.unimap.edu.my:80/dspace/handle/123456789/33656 http://www.scientific.net/AMM.487.210 10.4028/www.scientific.net/AMM.487.210 en Trans Tech Publications
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic DOE
Platinum
Reactive Ion Etching (RIE)
SF₆+Argon
Surface roughness
spellingShingle DOE
Platinum
Reactive Ion Etching (RIE)
SF₆+Argon
Surface roughness
Zaliman, Sauli, Dr.
Retnasamy, Vithyacharan
Aaron, Koay Terr Yeow
Siew Chui, Goh
Khairul Anwar, Mohamad Khazali
Nooraihan, Abdullah
Investigation of surface roughness on platinum deposited wafer after reactive ion etching using SF₆+Argon gaseous
description Link to publisher's homepage at http://www.ttp.net/
author2 zaliman@unimap.edu.my
author_facet zaliman@unimap.edu.my
Zaliman, Sauli, Dr.
Retnasamy, Vithyacharan
Aaron, Koay Terr Yeow
Siew Chui, Goh
Khairul Anwar, Mohamad Khazali
Nooraihan, Abdullah
format Article
author Zaliman, Sauli, Dr.
Retnasamy, Vithyacharan
Aaron, Koay Terr Yeow
Siew Chui, Goh
Khairul Anwar, Mohamad Khazali
Nooraihan, Abdullah
author_sort Zaliman, Sauli, Dr.
title Investigation of surface roughness on platinum deposited wafer after reactive ion etching using SF₆+Argon gaseous
title_short Investigation of surface roughness on platinum deposited wafer after reactive ion etching using SF₆+Argon gaseous
title_full Investigation of surface roughness on platinum deposited wafer after reactive ion etching using SF₆+Argon gaseous
title_fullStr Investigation of surface roughness on platinum deposited wafer after reactive ion etching using SF₆+Argon gaseous
title_full_unstemmed Investigation of surface roughness on platinum deposited wafer after reactive ion etching using SF₆+Argon gaseous
title_sort investigation of surface roughness on platinum deposited wafer after reactive ion etching using sf₆+argon gaseous
publisher Trans Tech Publications
publishDate 2014
url http://dspace.unimap.edu.my:80/dspace/handle/123456789/33656
_version_ 1643797243057143808
score 13.214268

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