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Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness

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Bibliographic Details
Main Author: Mohd Adam Alias
Other Authors: Ruslinda A. Rahim (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Oxidation
Silicon > Oxidation
Silicon oxide
Semiconductor wafers
Microelectronics
Silicon
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1995
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spelling my.unimap-19952008-10-08T03:25:48Z Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness Mohd Adam Alias Ruslinda A. Rahim (Advisor) Oxidation Silicon -- Oxidation Silicon oxide Semiconductor wafers Microelectronics Silicon Access is limited to UniMAP community. Oxidation is a process used in wafer fabrication. The goal of oxidation is to grow a high quality oxide layer on a silicon substrate. During oxidation a chemical reaction between the oxidants and the silicon atoms produces a layer of oxide on the silicon surface of the wafer. It is often the first step in wafer fabrication and will be repeated multiple times throughout the fabrication process. Oxidation takes place in an oxidation tube. During the reaction silicon reacts with oxidants to form silicon oxide layers. Typical operating temperature is between 900°C and 1,200°C. The oxide growth rate increases with temperature. In microfabrication, thermal oxidation is a way to produce a thin layer of oxide(usually silicon dioxide) on the surface of a wafer (semiconductor). The technique forces an oxidizing agent to diffuse into the wafer at high temperature and react with it. The rate of oxide growth is often predicted by the Deal-Grove model. Thermal oxidation may be applied to different materials, but this project will only consider oxidation of silicon substrates to produce silicon dioxide. 2008-09-08T13:20:52Z 2008-09-08T13:20:52Z 2008-04 Learning Object http://hdl.handle.net/123456789/1995 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Oxidation
Silicon -- Oxidation
Silicon oxide
Semiconductor wafers
Microelectronics
Silicon
spellingShingle Oxidation
Silicon -- Oxidation
Silicon oxide
Semiconductor wafers
Microelectronics
Silicon
Mohd Adam Alias
Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness
description Access is limited to UniMAP community.
author2 Ruslinda A. Rahim (Advisor)
author_facet Ruslinda A. Rahim (Advisor)
Mohd Adam Alias
format Learning Object
author Mohd Adam Alias
author_sort Mohd Adam Alias
title Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness
title_short Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness
title_full Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness
title_fullStr Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness
title_full_unstemmed Theoretical study, simulation & fabrication of Dry Oxidation in terms of SiO2 layer thickness, resistivity & surface roughness
title_sort theoretical study, simulation & fabrication of dry oxidation in terms of sio2 layer thickness, resistivity & surface roughness
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1995
_version_ 1643787517333340160
score 13.222552

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