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Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile

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Bibliographic Details
Main Author: Zaharah Mohamed
Other Authors: Nur Juliana Juhari (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Semiconductors > Etching
Plasma etching
Silicon oxide
Semiconductors > Design and construction
Integrated circuits
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1993
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spelling my.unimap-19932008-09-08T13:01:17Z Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile Zaharah Mohamed Nur Juliana Juhari (Advisor) Semiconductors -- Etching Plasma etching Silicon oxide Semiconductors -- Design and construction Integrated circuits Access is limited to UniMAP community. The principal focus of this project is dry etching technique by using the Inductively Couple Plasma-Reactive Ion Etching (ICP-RIE). An (ICP) system was chosen because of its high plasma density and low cost relative to other high density plasma etching systems. The etch rates and picture size were studied as a function of ICP power, pressure, RF power bias, process time and gas composition. Dry etching technique is favoured in most etching work due to it’s etch rate properties. This project to provide a recipe for get the effect of different gases parameter in dry etching process on etch rate profile. For obtain the profile etch rate and picture size by using a profilometer and Scanning Electron Microscope (SEM) imaging. 2008-09-08T13:01:17Z 2008-09-08T13:01:17Z 2008-04 Learning Object http://hdl.handle.net/123456789/1993 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Semiconductors -- Etching
Plasma etching
Silicon oxide
Semiconductors -- Design and construction
Integrated circuits
spellingShingle Semiconductors -- Etching
Plasma etching
Silicon oxide
Semiconductors -- Design and construction
Integrated circuits
Zaharah Mohamed
Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile
description Access is limited to UniMAP community.
author2 Nur Juliana Juhari (Advisor)
author_facet Nur Juliana Juhari (Advisor)
Zaharah Mohamed
format Learning Object
author Zaharah Mohamed
author_sort Zaharah Mohamed
title Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile
title_short Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile
title_full Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile
title_fullStr Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile
title_full_unstemmed Study of the effect of different Gases parameter in Dry Etching process on Etch Rate profile
title_sort study of the effect of different gases parameter in dry etching process on etch rate profile
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1993
_version_ 1643787516733554688
score 13.222552

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