Analytical base transit time model of uniformly doped base bipolar transistors considering Kirk effect
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The Institution of Engineers, Malaysia
2011
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my.unimap-135442011-08-12T05:39:11Z Analytical base transit time model of uniformly doped base bipolar transistors considering Kirk effect Md. Anwarul, Abedin M. M., Shahidul Hassan Bipolar junction transistors (BJT) Base transit time Effective Base Width Kirk effect Link to publisher's homepage at http://www.myiem.org.my/ In this paper analytical expressions of effective base width and base transit time for uniformly doped base of bipolar junction transistors (BJT) are developed taking Kirk effect into consideration. Modern bipolar junction transistors tend to operate with saturated carrier velocity in the collector space-charge region, and therefore we have incorporated this effect in the present work. Physical analysis of Kirk effect shows that the base transit time increases significantly when the base width widening or when Kirk effect is considered. 2011-08-12T05:39:11Z 2011-08-12T05:39:11Z 2005-09 Article The Journal of the Institution of Engineers, Malaysia, vol. 66(3), 2005, pages 42-46 0126-513X http://www.myiem.org.my/content/iem_journal_2005-176.aspx http://hdl.handle.net/123456789/13544 en The Institution of Engineers, Malaysia |
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http://dspace.unimap.edu.my/ |
| language |
English |
| topic |
Bipolar junction transistors (BJT) Base transit time Effective Base Width Kirk effect |
| spellingShingle |
Bipolar junction transistors (BJT) Base transit time Effective Base Width Kirk effect Md. Anwarul, Abedin M. M., Shahidul Hassan Analytical base transit time model of uniformly doped base bipolar transistors considering Kirk effect |
| description |
Link to publisher's homepage at http://www.myiem.org.my/ |
| format |
Article |
| author |
Md. Anwarul, Abedin M. M., Shahidul Hassan |
| author_facet |
Md. Anwarul, Abedin M. M., Shahidul Hassan |
| author_sort |
Md. Anwarul, Abedin |
| title |
Analytical base transit time model of uniformly doped base bipolar transistors considering Kirk effect |
| title_short |
Analytical base transit time model of uniformly doped base bipolar transistors considering Kirk effect |
| title_full |
Analytical base transit time model of uniformly doped base bipolar transistors considering Kirk effect |
| title_fullStr |
Analytical base transit time model of uniformly doped base bipolar transistors considering Kirk effect |
| title_full_unstemmed |
Analytical base transit time model of uniformly doped base bipolar transistors considering Kirk effect |
| title_sort |
analytical base transit time model of uniformly doped base bipolar transistors considering kirk effect |
| publisher |
The Institution of Engineers, Malaysia |
| publishDate |
2011 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/13544 |
| _version_ |
1643790887869743104 |
| score |
13.214268 |