Description: Analytical base transit time model of uniformly doped base bipolar transistors considering Kirk effect

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Bibliographic Details
Main Authors:	Md. Anwarul, Abedin, M. M., Shahidul Hassan
Format:	Article
Language:	English
Published:	The Institution of Engineers, Malaysia 2011
Subjects:	Bipolar junction transistors (BJT) Base transit time Effective Base Width Kirk effect
Online Access:	http://dspace.unimap.edu.my/xmlui/handle/123456789/13544
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Summary:	Link to publisher's homepage at http://www.myiem.org.my/