High-k gate dielectric nano-FET leakage current analysis

• Main Authors: Bunseng, Chan, Charlie Soh, Kang, Eng Siew, Hui, Seng Kheong, Lim, Wei Jer, Ismail Saad, Nurmin Bolong
• Format: Proceedings
• Language: English; English
• Published: Institute of Electrical and Electronics Engineers 2021
• Subjects: TA1-2040 Engineering (General). Civil engineering (General); TK1-9971 Electrical engineering. Electronics. Nuclear engineering
• Online Access: https://eprints.ums.edu.my/id/eprint/32713/2/High-k%20gate%20dielectric%20nano-FET%20leakage%20current%20analysis.ABSTRACT.pdf; https://eprints.ums.edu.my/id/eprint/32713/1/High-k%20Gate%20Dielectric%20Nano-FET%20Leakage%20Current%20Analysis.pdf; https://eprints.ums.edu.my/id/eprint/32713/; https://ieeexplore.ieee.org/document/9652730

This paper reveals the use of high-k dielectric material to mitigate the subthreshold leakage current. The feature size of conventional MOSFET using SiO2 has approached their physical limits where the oxide thickness should not reach below 2nm due to high leakage current and the tunnelling increase...