Optoelectronic properties of improved GaN semiconductor on Si (111) using growth approaches and different interlayer’s
The crystalline quality of wider direct band gap semiconductor (3.4 eV) h-GaN epilayer grown on Si (111) is evaluated by different growth approaches and by using different interlayer’s. The investigations of GaN epilayer crystal quality for the template of converted porous GaN layer formed by novel...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English English |
| Published: |
Emerald Group Publishing Ltd.
2013
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| Subjects: | |
| Online Access: | https://eprints.ums.edu.my/id/eprint/34439/1/ABSTRACT.pdf https://eprints.ums.edu.my/id/eprint/34439/2/FULLTEXT.pdf https://eprints.ums.edu.my/id/eprint/34439/ https://www.emerald.com/insight/content/doi/10.1260/1708-5284.10.5.419/full/html https://doi.org/10.1260/1708-5284.10.5.419 |
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