Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor

• Main Authors: Mahmood, Ahmed, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
• Format: Article
• Language: English
• Published: Institute of Advanced Engineering and Science (IAES) 2019
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://umpir.ump.edu.my/id/eprint/25655/1/Effects%20of%20downscaling%20channel%20dimensions%20on%20electrical.pdf; http://umpir.ump.edu.my/id/eprint/25655/; http://ijece.iaescore.com/index.php/IJECE/article/view/15510; http://doi.org/10.11591/ijece.v9i4.pp%25p

In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).