Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor
This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evalua...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
IEEE
2018
|
| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/25088/1/Optimal%20Nano-Dimensional%20Channel%20of%20GaAs-FinFET%20Transistor.pdf http://umpir.ump.edu.my/id/eprint/25088/ https://doi.org/10.1109/SCORED.2018.8710811 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evaluated in terms of various electrical characteristics (I ON /I OFF , SS, VT and DIBL). The MuGFET simulation tool is used in this study to simulate the current-voltage characteristics for different dimensions of channel. According to highest I ON /I OFF ratio, and nearest SS to the ideal SS, the best channel dimensions of GaAs-FinFET are designed. The results show that the best performance can be achieved with the lowest scaling factor, K of 0.25, when the length is 40 nm, the width is 3 nm, and the oxide thickness is 1 nm. |
|---|