The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition

• Main Authors: Abd Rahman, Mohd Nazri, Shuhaimi, Ahmad, Seng, Ooi Chong, Tan, Gary, Anuar, Afiq, Talik, Noor Azrina, Abdul Khudus, Muhammad Imran Mustafa, Chanlek, Narong, Abd Majid, Wan Haliza
• Format: Article
• Published: Springer 2021
• Subjects: QC Physics
• Online Access: http://eprints.um.edu.my/34129/

Diversification of pulse cycle numbers proportional to the AlN films thickness using PALE technique on c-plane sapphire substrate were carried out via MOCVD. It was experiential that the structural features of as-deposited AlN films were significantly impinged on the film thickness where the highest number of pulse cycles (1050 pairs) present the lowest (0 0 0 2)-symmetry and (1 0-1 2)-asymmetry XRC analysis, manifest a decrease of threaded dislocation density. The XPS spectra present a low foreign impurities inclusion on the AlN film surface was achieved even at highest cycle number by engaging the PALE growth technique. The spectroscopy of PL and UV-Vis NIR were employed to probe the optical characteristics involving the absorption and their band-edge transitions. In both optical spectroscopies, the room temperature of band-edge emission lines has expressed a significant interconnection between the structural and optical quality of as-deposited AlN films at different pulse cycle numbers.