Some structural parameters of ZnSxSe1−x thin films prepared by electron beam evaporation
ZnSxSe1-x thin films were prepared by electron beam evaporation. The samples were investigated by using energy dispersion X-ray analysis (EDXA), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results implied that the film composition deviates from the theoretical stoichiometric...
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| Main Authors: | , , |
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| Format: | Article |
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Elsevier
2005
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/24460/ https://doi.org/10.1016/j.physb.2005.01.422 |
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| Summary: | ZnSxSe1-x thin films were prepared by electron beam evaporation. The samples were investigated by using energy dispersion X-ray analysis (EDXA), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results implied that the film composition deviates from the theoretical stoichiometric and that excess of S was formed as grain boundaries. The XRD profiles showed that the films are polycrystalline with cubic structure grown preferentially along the 〈1 1 1〉 axis. The lattice parameter of the cubic structure varied linearly with the film composition according to Vegard's Law. Most of the samples experienced tensile stress while some of them exhibited compressive stress. © 2005 Elsevier B.V. All rights reserved. |
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