Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD

• Main Authors: Abd Rahman, Mohd Nazri, Shuhaimi, Ahmad, Yusuf, Yusnizam, Li, Hongjian, Sulaiman, Abdullah Fadil, Alif Samsudin, Muhammad Esmed, Zainal, Norzaini, Abdul Khudus, Muhammad Imran Mustafa
• Format: Article
• Published: Elsevier 2018
• Subjects: Q Science (General); QC Physics
• Online Access: http://eprints.um.edu.my/22754/; https://doi.org/10.1016/j.spmi.2018.05.024

A high-quality aluminium nitride buffer layers were grown on (0 0 0 1) sapphire substrate at standard pressure with a subsequent low growth temperature via metal organic chemical vapour deposition. The preparation of aluminium nitride buffer layers was accomplished by growing a thin aluminium nitrid...