Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD
A high-quality aluminium nitride buffer layers were grown on (0 0 0 1) sapphire substrate at standard pressure with a subsequent low growth temperature via metal organic chemical vapour deposition. The preparation of aluminium nitride buffer layers was accomplished by growing a thin aluminium nitrid...
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Main Authors: | , , , , , , , |
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Format: | Article |
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Elsevier
2018
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Online Access: | http://eprints.um.edu.my/22754/ https://doi.org/10.1016/j.spmi.2018.05.024 |
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