Safe operating condition and lifetime estimation in p-MOSFET device due to negative bias temperature instability
Negative Bias Temperature Instability is a serious reliability concerns for modern p-MOSFETs with Effective Oxide Thickness less than 2nm. This reliability problem can severely affect the device performance and limit the lifetime of the device. This paper is focusing on the safe operating conditio...
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| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2011
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/12822/1/Safe_Operating_Condition_and_Lifetime.pdf http://eprints.um.edu.my/12822/ |
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