Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET

• Main Authors: Hatta, Sharifah Wan M., Hussin, Hanim Yati, Soon, F.Y., Abdul Wahab, Yasmin, Abdul Hadi, Dayanasari, Soin, Norhayati, Alam, A. H.M.Zahirul, Nordin, Anis Nurashikin
• Format: Conference or Workshop Item
• Language: English; English
• Published: IEEE 2017
• Subjects: T Technology (General)
• Online Access: http://irep.iium.edu.my/62886/1/62886%20Negative%20Bias%20Temperature%20Instability%20Characterization.pdf; http://irep.iium.edu.my/62886/2/62886%20Negative%20Bias%20Temperature%20Instability%20SCOPUS.pdf; http://irep.iium.edu.my/62886/; http://ieeexplore.ieee.org/document/8074978/

A major effect of different measurement delay in seconds is revealed through quasi DC Stress Measure Stress experiments. We found that different delay of measurements in seconds contributed to different stress time needed to achieve target 10% degradation of Vth. The longer delay, the more time...