Performance investigation of high-k dielectric material for shorter channel length MOSFET / Fatin Antasha Anizam

• Main Author: Anizam, Fatin Antasha
• Format: Student Project
• Language: English
• Published: 2020
• Subjects: Electronics; Apparatus and materials; Semiconductors
• Online Access: http://ir.uitm.edu.my/id/eprint/39863/1/39863.pdf; http://ir.uitm.edu.my/id/eprint/39863/

The objective of this study is to investigate the performance of MOSFET using different types of high-k dielectric material which is silicon nitride (Si3N4), aluminium oxide (Al203) and hafnium oxide (HfO2 ). The purposed of this study is to find a new dielectric material that can replace silicon di...