Performance investigation of high-k dielectric material for shorter channel length MOSFET / Fatin Antasha Anizam

The objective of this study is to investigate the performance of MOSFET using different types of high-k dielectric material which is silicon nitride (Si3N4), aluminium oxide (Al203) and hafnium oxide (HfO2 ). The purposed of this study is to find a new dielectric material that can replace silicon di...

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Bibliographic Details
Main Author: Anizam, Fatin Antasha
Format: Student Project
Language:English
Published: 2020
Subjects:
Online Access:http://ir.uitm.edu.my/id/eprint/39863/1/39863.pdf
http://ir.uitm.edu.my/id/eprint/39863/
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