Durability of 4H-SiC Schottky power diodes irradiated with high-energy bombarding electrons

• المؤلفون الرئيسيون: Mohd Khairi, Mohamad Azim, Abdullah, Yusof, Ab Rahim, Rosminazuin, Hasbullah, Nurul Fadzlin
• التنسيق: مقال
• اللغة: English; English
• منشور في: The Institution of Engineering and Technology (IET) 2019
• الموضوعات: T Technology (General); T175 Industrial research. Research and development; TK Electrical engineering. Electronics Nuclear engineering; TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
• الوصول للمادة أونلاين: http://irep.iium.edu.my/72561/1/Revised_M.%20Azim%20Khairi_IET%20Submission.pdf; http://irep.iium.edu.my/72561/7/Gmail%20-%20Fwd_%20Decision%20on%20your%20Paper%20-%20IET%20Circuits%2C%20Devices%20%26%20Systems.pdf; http://irep.iium.edu.my/72561/; https://digital-library.theiet.org/content/journals/iet-cds

A performance comparison of high-voltage SiC Schottky power diodes from ROHM Co., and CREE, Inc., is reported. The diodes were irradiated by high-energy, 3.0 MeV, electrons within a fluence ranging from 6.6×1015 to 4.95×1016 electron/cm2 . Current density-voltage and capacitance-voltage character...