The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode

• Main Authors: Ganiyev, Sabuhi, Khairi, Mohammad Azim, Ahmad Fauzi, Dhiyauddin, Abdullah, Yusof, Hasbullah, Nurul Fadzlin
• Format: Article
• Language: English; English; English; English
• Published: Maik Nauka-Interperiodica Publishing 2017
• Subjects: TK Electrical engineering. Electronics Nuclear engineering; TK4001 Applications of electric power
• Online Access: http://irep.iium.edu.my/63086/2/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal%20_scopus.pdf; http://irep.iium.edu.my/63086/13/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal%20_MYRA.pdf; http://irep.iium.edu.my/63086/19/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal.pdf; http://irep.iium.edu.my/63086/25/Hasbullah%2C%20Nurul%20Fadzlin%20-%20Web%20of%20Science%20Core%20Collection%20%281%29.pdf; http://irep.iium.edu.my/63086/; https://link.springer.com/article/10.1134/S1063782617120077

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forwa...