Material characterization of a doped triangular silicon nanowire using raman spectroscopy
A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using a doped Silicon-on Insulator (SOI) as the starting substrate. The use of ODE etchant such as potassium hydroxide (KOH) and Tetra-Methyl Ammonium Hydroxi...
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Main Authors: | , , , |
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Format: | Article |
Language: | English English |
Published: |
American Scientific Publishers
2018
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Subjects: | |
Online Access: | http://irep.iium.edu.my/71148/1/71148_Material%20Characterization%20of%20a%20Doped%20Triangular.pdf http://irep.iium.edu.my/71148/2/71148_Material%20Characterization%20of%20a%20Doped%20Triangular_WOS.pdf http://irep.iium.edu.my/71148/ |
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