Material characterization of a doped triangular silicon nanowire using raman spectroscopy

• Main Authors: Za'bah, Nor Farahidah, Md Ralib @ Md Raghib, Aliza 'Aini, Kwa, Kelvin S. K., O'Neill, Anthony
• Format: Article
• Language: English; English
• Published: American Scientific Publishers 2018
• Subjects: TA213 Engineering machinery, tools, and implements
• Online Access: http://irep.iium.edu.my/71148/1/71148_Material%20Characterization%20of%20a%20Doped%20Triangular.pdf; http://irep.iium.edu.my/71148/2/71148_Material%20Characterization%20of%20a%20Doped%20Triangular_WOS.pdf; http://irep.iium.edu.my/71148/

A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using a doped Silicon-on Insulator (SOI) as the starting substrate. The use of ODE etchant such as potassium hydroxide (KOH) and Tetra-Methyl Ammonium Hydroxi...