Electrical characterisation of highly doped triangular silicon nanowires

• Main Authors: Za'bah, Nor Farahidah, Kwa, Kelvin S. K., O’Neill, Anthony
• Format: Article
• Language: English; English
• Published: Trans Tech Publications Ltd., Switzerland 2014
• Subjects: TA401 Materials of engineering and construction
• Online Access: http://irep.iium.edu.my/38886/1/Electrical_Characterization_of_Highly_Doped_Triangular_Silicon_Nanowires.pdf; http://irep.iium.edu.my/38886/4/38886_Electrical%20characterisation_Scopus.pdf; http://irep.iium.edu.my/38886/; http://www.ttp.net/

A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using <100> Silicon-on Insulator (SOI) as the starting substrate. Initially, the samples were doped with phosphorus using the diffusion process resultin...