Focused ion beam machining of silicon
This paper optimizes the parameters of a focused gallium ion beam system for the micromachining of single-crystal silicon. The effect of the parameters on the surface integrity and material removal rate (MRR) were studied. The surface integrity and machined features were measured with a scanning pro...
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my.iium.irep.271102013-07-23T07:22:34Z http://irep.iium.edu.my/27110/ Focused ion beam machining of silicon Hung, NguyenPhu Fu, Yongqi Ali, Mohammad Yeakub TS Manufactures This paper optimizes the parameters of a focused gallium ion beam system for the micromachining of single-crystal silicon. The effect of the parameters on the surface integrity and material removal rate (MRR) were studied. The surface integrity and machined features were measured with a scanning probe microscope. Statistical models were established to predict the sputtered depths and MRRs. The sputtering depth increased with higher accelerating voltage, more ion dose, shorter pixel spacing, and longer dwell time. Similar trends were found for predicting the MRR. A surface roughness in the range of 2-5 nm was achieved, and was found to be linearly dependent on the pixel spacing. © 2002 Elsevier Science B.V. All rights reserved. Elsevier BV 2002 Article REM application/pdf en http://irep.iium.edu.my/27110/1/022_JMPT_127%282%29_256-260.pdf Hung, NguyenPhu and Fu, Yongqi and Ali, Mohammad Yeakub (2002) Focused ion beam machining of silicon. Journal of Materials Processing Technology, 127 (2). pp. 256-260. ISSN 0924-0136 http://www.sciencedirect.com/science/article/pii/S092401360200153X 10.1016/S0924-0136(02)00153-X |
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This paper optimizes the parameters of a focused gallium ion beam system for the micromachining of single-crystal silicon. The effect of the parameters on the surface integrity and material removal rate (MRR) were studied. The surface integrity and machined features were measured with a scanning probe microscope. Statistical models were established to predict the sputtered depths and MRRs. The sputtering depth increased with higher accelerating voltage, more ion dose, shorter pixel spacing, and longer dwell time. Similar trends were found for predicting the MRR. A surface roughness in the range of 2-5 nm was achieved, and was found to be linearly dependent on the pixel spacing. © 2002 Elsevier Science B.V. All rights reserved. |
format |
Article |
author |
Hung, NguyenPhu Fu, Yongqi Ali, Mohammad Yeakub |
author_facet |
Hung, NguyenPhu Fu, Yongqi Ali, Mohammad Yeakub |
author_sort |
Hung, NguyenPhu |
title |
Focused ion beam machining of silicon |
title_short |
Focused ion beam machining of silicon |
title_full |
Focused ion beam machining of silicon |
title_fullStr |
Focused ion beam machining of silicon |
title_full_unstemmed |
Focused ion beam machining of silicon |
title_sort |
focused ion beam machining of silicon |
publisher |
Elsevier BV |
publishDate |
2002 |
url |
http://irep.iium.edu.my/27110/1/022_JMPT_127%282%29_256-260.pdf http://irep.iium.edu.my/27110/ http://www.sciencedirect.com/science/article/pii/S092401360200153X |
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1643609271290560512 |
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13.209306 |