Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs
In this work, the emission efficiency of InxGa1-xN based light emitting diodes (LEDs) had been numerically investigated with the variation of the number of quantum well. From our calculation, we found that non-uniformity of carriers distribution (especially electron) in the wells leads to serious in...
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Main Authors: | Zainal, N., Azimah, E., Hassan, Z., Abu Hassan, H., Hashim, M.R. |
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Format: | Article |
Language: | English |
Published: |
Universiti Kebangsaan Malaysia
2014
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Online Access: | http://journalarticle.ukm.my/7819/1/13_N._Zainal.pdf http://journalarticle.ukm.my/7819/ http://www.ukm.my/jsm/ |
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