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Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector

Described are the design and characterisation of an ultra-low-power temperature level detector (TLD) and temperature sensor based on a silicon-on-insulator (SOI) CMOS integrated circuit (IC) for harsh environment applications. Since this IC is mainly for harsh environment applications (e.g. high tem...

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Main Authors: Assaad, Maher, Boufouss, Elhafed, Gerard, Pierre, Francis, Laurent, Flandre, Denis
Format: Citation Index Journal
Published: 2012
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utp.edu.my/9000/1/stamp.jsp_tp%3D%26arnumber%3D6235155%26tag%3D1
http://eprints.utp.edu.my/9000/
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spelling my.utp.eprints.90002013-10-25T02:16:03Z Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector Assaad, Maher Boufouss, Elhafed Gerard, Pierre Francis, Laurent Flandre, Denis TK Electrical engineering. Electronics Nuclear engineering Described are the design and characterisation of an ultra-low-power temperature level detector (TLD) and temperature sensor based on a silicon-on-insulator (SOI) CMOS integrated circuit (IC) for harsh environment applications. Since this IC is mainly for harsh environment applications (e.g. high temperatures and radiations), it has been designed and manufactured using the 1 μm high-temperature SOI-CMOS technology provided by X-FAB. The measured power dissipation of the TLD circuit is 9 mW at a supply voltage of 5 V and temperature of 27 °C, according to the measurement results of the manufactured design. 2012 Citation Index Journal PeerReviewed application/pdf http://eprints.utp.edu.my/9000/1/stamp.jsp_tp%3D%26arnumber%3D6235155%26tag%3D1 Assaad, Maher and Boufouss, Elhafed and Gerard, Pierre and Francis, Laurent and Flandre, Denis (2012) Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector. [Citation Index Journal] http://eprints.utp.edu.my/9000/
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Institutional Repository
url_provider http://eprints.utp.edu.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Assaad, Maher
Boufouss, Elhafed
Gerard, Pierre
Francis, Laurent
Flandre, Denis
Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector
description Described are the design and characterisation of an ultra-low-power temperature level detector (TLD) and temperature sensor based on a silicon-on-insulator (SOI) CMOS integrated circuit (IC) for harsh environment applications. Since this IC is mainly for harsh environment applications (e.g. high temperatures and radiations), it has been designed and manufactured using the 1 μm high-temperature SOI-CMOS technology provided by X-FAB. The measured power dissipation of the TLD circuit is 9 mW at a supply voltage of 5 V and temperature of 27 °C, according to the measurement results of the manufactured design.
format Citation Index Journal
author Assaad, Maher
Boufouss, Elhafed
Gerard, Pierre
Francis, Laurent
Flandre, Denis
author_facet Assaad, Maher
Boufouss, Elhafed
Gerard, Pierre
Francis, Laurent
Flandre, Denis
author_sort Assaad, Maher
title Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector
title_short Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector
title_full Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector
title_fullStr Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector
title_full_unstemmed Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector
title_sort design and characterisation of ultra-low-power soi-cmos ic temperature level detector
publishDate 2012
url http://eprints.utp.edu.my/9000/1/stamp.jsp_tp%3D%26arnumber%3D6235155%26tag%3D1
http://eprints.utp.edu.my/9000/
_version_ 1738655694720073728
score 13.15806

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