Simulation and Analysis of Si Schottky Diode Family in DC-DC Converter
The unipolar-based devices, silicon schottky (Si) and silicon carbide schottky (SiC) power diodes are investigated for their reverse recovery transient responses and the effects on the switching losses of the FET in the DC-DC converter. Two inductive load chopper circuits are simulated with differen...
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| Main Authors: | , |
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| Format: | Citation Index Journal |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://eprints.utp.edu.my/6716/1/Journal%20%5B06%5D.pdf http://eprints.utp.edu.my/6716/ |
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