Simulation and Analysis of Si Schottky Diode Family in DC-DC Converter
The unipolar-based devices, silicon schottky (Si) and silicon carbide schottky (SiC) power diodes are investigated for their reverse recovery transient responses and the effects on the switching losses of the FET in the DC-DC converter. Two inductive load chopper circuits are simulated with differen...
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| Main Authors: | , |
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| Format: | Citation Index Journal |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://eprints.utp.edu.my/6716/1/Journal%20%5B06%5D.pdf http://eprints.utp.edu.my/6716/ |
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| Summary: | The unipolar-based devices, silicon schottky (Si) and silicon carbide schottky (SiC) power diodes are investigated for their reverse recovery transient responses and the effects on the switching losses of the FET in the DC-DC converter. Two inductive load chopper circuits are simulated with different test diodes using PSpice software to determine the effectiveness and superiority in each of the devices. All parameter settings are consistent for
both converter circuits. The results have shown that the SiC diode has higher energy savings of more than 73.13 % in turn-off switching losses. This eventually corresponds to the reduction of 96.16 % in FET turn-on peak power dissipation of SiC converter. However, there is a minor
drawback in drain voltage overshoot of the converter. Some detailed analyses are presented in the paper. |
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