A 0.8 mm2 Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power

• Main Authors: Nitesh, Ram Sharma, Rajendran, Jagadheswaran, Ramiah, Harikrishnan, Yarman, Binboga Siddik
• Format: Article
• Published: Institute of Electrical and Electronics Engineers 2019
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.um.edu.my/23824/; https://doi.org/10.1109/ACCESS.2019.2949369

This paper presents a comprehensive design of a fully integrated multistage GaAs HBT power amplifier that achieves both linearity and high efficiency within a chip area of 0.855 mm2 for 4G and 5G applications covering the lower frequency band of 700-800 MHz. A novel linearizer circuit is integrated...