Simulation study of single event burnout hardening technique on power UMOSFET using P-Island layer
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2020
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85100568647&doi=10.1109%2fPECon48942.2020.9314508&partnerID=40&md5=855f05c642f63589fed6956238ce151c http://eprints.utp.edu.my/24486/ |
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