Enhanced Trench Shielded Power UMOSFET for Single Event Burnout Hardening

• Main Authors: Krishnamurthy, S., Kannan, R., Hussin, F.A., Yahya, E.A.
• Format: Conference or Workshop Item
• Published: Institute of Electrical and Electronics Engineers Inc. 2019
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078311992&doi=10.1109%2fRSM46715.2019.8943495&partnerID=40&md5=7c8ac635c0f811653efb271a9f089524; http://eprints.utp.edu.my/23535/

An enhanced structure for Single-Event Burnout (SEB) hardening in trench gate shielded power UMOSFET is presented in this work. The proposed power MOSFET structure includes an n-type region wrapping p+ shielded region underneath the gate trench and adds an n-buffer layer between the epitaxial layer...