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Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes

In this work, a CMOS compatible surface acoustic wave (SAW) device has been simulated and analyzed on SiO2/AlN/SiO2/Si. The simulation results have been used to characterize a typical fabricated device as well. The phase velocity, coupling coefficient, and temperature coefficient of frequency (TCF)...

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Main Authors: Aslam, M.Z., Jeoti, V., Karuppanan, S., Pandian, M.S., Ferrer, E.M., Suresh, K.
Format: Article
Published: Elsevier B.V. 2020
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85088260385&doi=10.1016%2fj.sna.2020.112202&partnerID=40&md5=b47de403ee17ece178370963e4f8e3ae
http://eprints.utp.edu.my/23194/
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spelling my.utp.eprints.231942021-08-19T06:09:42Z Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes Aslam, M.Z. Jeoti, V. Karuppanan, S. Pandian, M.S. Ferrer, E.M. Suresh, K. In this work, a CMOS compatible surface acoustic wave (SAW) device has been simulated and analyzed on SiO2/AlN/SiO2/Si. The simulation results have been used to characterize a typical fabricated device as well. The phase velocity, coupling coefficient, and temperature coefficient of frequency (TCF) of surface acoustic waves in the proposed structure have been investigated using the finite-element (FE) simulation. The simulation results show that a high velocity and a large effective coupling factor can be simultaneously obtained. Besides, the excellent nearly zero TCF is also achieved. The analysis further shows potential for designing high-frequency SAW devices that are CMOS compatible and temperature stable utilizing the Sezawa wave mode. © 2020 Elsevier B.V. Elsevier B.V. 2020 Article NonPeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85088260385&doi=10.1016%2fj.sna.2020.112202&partnerID=40&md5=b47de403ee17ece178370963e4f8e3ae Aslam, M.Z. and Jeoti, V. and Karuppanan, S. and Pandian, M.S. and Ferrer, E.M. and Suresh, K. (2020) Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes. Sensors and Actuators, A: Physical, 313 . http://eprints.utp.edu.my/23194/
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Institutional Repository
url_provider http://eprints.utp.edu.my/
description In this work, a CMOS compatible surface acoustic wave (SAW) device has been simulated and analyzed on SiO2/AlN/SiO2/Si. The simulation results have been used to characterize a typical fabricated device as well. The phase velocity, coupling coefficient, and temperature coefficient of frequency (TCF) of surface acoustic waves in the proposed structure have been investigated using the finite-element (FE) simulation. The simulation results show that a high velocity and a large effective coupling factor can be simultaneously obtained. Besides, the excellent nearly zero TCF is also achieved. The analysis further shows potential for designing high-frequency SAW devices that are CMOS compatible and temperature stable utilizing the Sezawa wave mode. © 2020 Elsevier B.V.
format Article
author Aslam, M.Z.
Jeoti, V.
Karuppanan, S.
Pandian, M.S.
Ferrer, E.M.
Suresh, K.
spellingShingle Aslam, M.Z.
Jeoti, V.
Karuppanan, S.
Pandian, M.S.
Ferrer, E.M.
Suresh, K.
Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes
author_facet Aslam, M.Z.
Jeoti, V.
Karuppanan, S.
Pandian, M.S.
Ferrer, E.M.
Suresh, K.
author_sort Aslam, M.Z.
title Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes
title_short Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes
title_full Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes
title_fullStr Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes
title_full_unstemmed Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes
title_sort surface acoustic wave modes characteristics of cmos compatible sio2/aln/sio2/si multilayer structure with embedded electrodes
publisher Elsevier B.V.
publishDate 2020
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85088260385&doi=10.1016%2fj.sna.2020.112202&partnerID=40&md5=b47de403ee17ece178370963e4f8e3ae
http://eprints.utp.edu.my/23194/
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score 13.188404

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