Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique
AlGaN thin films can be used in a variety of electronic applications because have a wide energy band-gap and it's tuneable in range (3.11 eV-6.4 eV). However, the deposition of AlGaN facing difficulties depositing at room temperature and required longer time deposition to achieved high quality...
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Main Authors: | , , , , , , , , , , |
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Format: | Conference or Workshop Item |
Published: |
2021
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/98153/ http://dx.doi.org/10.1109/RSM52397.2021.9511605 |
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