Structural and morphological properties of AlGaN thin films prepared by co-sputtering technique

• Main Authors: Othman, Nur Afiqah, Nayan, Nafarizal, Mustafa, Mohd Kamarulzaki, Azman, Zulkifli, Megat Hasnan, Megat Muhammad Ikhsan, Bakri, Anis Suhaili, Jaffar, Siti Noryasmin, Abu Bakar, Ahmad Shuhaimi, Mamat, Mohd Hafiz, Mohd Yusop, Mohd Zamri, Ahmad, Mohd Yazid
• Format: Conference or Workshop Item
• Published: 2021
• Subjects: TJ Mechanical engineering and machinery; TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.um.edu.my/35844/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115067149&doi=10.1109%2fRSM52397.2021.9511605&partnerID=40&md5=2abca249047f39b85d901352449cab53

AlGaN thin films can be used in a variety of electronic applications because have a wide energy band-gap and it's tuneable in range (3.11 eV-6.4 eV). However, the deposition of AlGaN facing difficulties depositing at room temperature and required longer time deposition to achieved high quality...