Explicit continuous charge-based compact model of surrounding gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation
A charge-based compact model that includes the dynamic depletion behavior for arbitrary doped surrounding gate MOSFET (SRGMOSFET) is presented in this paper. The one-dimensional Poisson's equation is first solved to obtain the continuous explicit solution of the mobile charge density and drain...
Saved in:
Main Authors: | Hamzah, Afiq, Alias, N. Ezaila, Tan, Michael Loong Peng, Ali Hosseingholipourasl, Ali Hosseingholipourasl, Ismail, Razali |
---|---|
Format: | Article |
Published: |
IOP Publishing Ltd
2020
|
Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/86971/ http://dx.doi.org/10.1088/1361-6641/ab6bf8 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Vertical double gate MOSFET for nanoscale device with fully depleted feature
by: Riyadi, Munawar A., et al.
Published: (2009) -
Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study
by: Chaudhry, Amit, et al.
Published: (2016) -
Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects
by: Hamzah, A., et al.
Published: (2016) -
Resource depletion rent and its implications on optimal depletion in selected oil producing countries in Southeast Asia
by: Wan, Leong Fee
Published: (1984) -
A charge-based compact modeling of cylindrical surrounding-floating gate MOSFET (S-FGMOSFET) for memory cell application
by: Hamzah, A., et al.
Published: (2016)