Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device

• Main Authors: Parimon, Norfarariyanti, Mohd. Yusof, Siti Suhaila, Hashim, Abdul Manaf
• Format: Conference or Workshop Item
• Language: English
• Published: 2008
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/7620/1/Hashim_Abdul_Manaf_2008_Modelling_Characterization_Schottky_Diode_AlGaAs.pdf; http://eprints.utm.my/id/eprint/7620/; http://dx.doi.org/10.1109/AMS.2008.187

The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design...