Ballistic mobility and saturation velocity in low-dimensional nanostructures

Ohm's law, a linear drift velocity response to the applied electric field, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In the high electric...

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Main Authors: Saad, Ismail, Tan, Michael Loong Peng, Ing, Hui Hii, Ismail, Razali, Arora, Vijay Kumar
Format: Article
Language:English
Published: Elsevier 2009
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Online Access:http://eprints.utm.my/id/eprint/7505/3/IsmailSaad2009_BallisticMobilityandSaturationVelocity.pdf
http://eprints.utm.my/id/eprint/7505/
http://dx.doi.org/10.1016/j.mejo.2008.06.046
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spelling my.utm.75052017-10-11T04:41:58Z http://eprints.utm.my/id/eprint/7505/ Ballistic mobility and saturation velocity in low-dimensional nanostructures Saad, Ismail Tan, Michael Loong Peng Ing, Hui Hii Ismail, Razali Arora, Vijay Kumar TK Electrical engineering. Electronics Nuclear engineering Ohm's law, a linear drift velocity response to the applied electric field, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In the high electric field, the collision-free ballistic transport is predicted, while in low electric field the transport remains predominantly scattering-limited in a long-channel. In a micro/nano-circuit, even a low logic voltage of 1 V gives an electric field that is above its critical value εc (εnot double greater-than signεc) triggering non-ohmic behavior that results in ballistic velocity saturation. The saturation velocity is an appropriate thermal velocity for a non-degenerate and Fermi velocity for a degenerate system with given dimensionality. A quantum emission may lower this ballistic velocity. The collision-free ballistic mobility in the ohmic domain arises when the channel length is smaller than the mean free path. The results presented will have a profound influence in interpreting the data on a variety of low-dimensional nanostructures. Elsevier 2009-03 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/7505/3/IsmailSaad2009_BallisticMobilityandSaturationVelocity.pdf Saad, Ismail and Tan, Michael Loong Peng and Ing, Hui Hii and Ismail, Razali and Arora, Vijay Kumar (2009) Ballistic mobility and saturation velocity in low-dimensional nanostructures. Microelectronics Journal, 40 (3). pp. 540-542. ISSN 0026-2692 (In Press) http://dx.doi.org/10.1016/j.mejo.2008.06.046 doi:10.1016/j.mejo.2008.06.046
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Saad, Ismail
Tan, Michael Loong Peng
Ing, Hui Hii
Ismail, Razali
Arora, Vijay Kumar
Ballistic mobility and saturation velocity in low-dimensional nanostructures
description Ohm's law, a linear drift velocity response to the applied electric field, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In the high electric field, the collision-free ballistic transport is predicted, while in low electric field the transport remains predominantly scattering-limited in a long-channel. In a micro/nano-circuit, even a low logic voltage of 1 V gives an electric field that is above its critical value εc (εnot double greater-than signεc) triggering non-ohmic behavior that results in ballistic velocity saturation. The saturation velocity is an appropriate thermal velocity for a non-degenerate and Fermi velocity for a degenerate system with given dimensionality. A quantum emission may lower this ballistic velocity. The collision-free ballistic mobility in the ohmic domain arises when the channel length is smaller than the mean free path. The results presented will have a profound influence in interpreting the data on a variety of low-dimensional nanostructures.
format Article
author Saad, Ismail
Tan, Michael Loong Peng
Ing, Hui Hii
Ismail, Razali
Arora, Vijay Kumar
author_facet Saad, Ismail
Tan, Michael Loong Peng
Ing, Hui Hii
Ismail, Razali
Arora, Vijay Kumar
author_sort Saad, Ismail
title Ballistic mobility and saturation velocity in low-dimensional nanostructures
title_short Ballistic mobility and saturation velocity in low-dimensional nanostructures
title_full Ballistic mobility and saturation velocity in low-dimensional nanostructures
title_fullStr Ballistic mobility and saturation velocity in low-dimensional nanostructures
title_full_unstemmed Ballistic mobility and saturation velocity in low-dimensional nanostructures
title_sort ballistic mobility and saturation velocity in low-dimensional nanostructures
publisher Elsevier
publishDate 2009
url http://eprints.utm.my/id/eprint/7505/3/IsmailSaad2009_BallisticMobilityandSaturationVelocity.pdf
http://eprints.utm.my/id/eprint/7505/
http://dx.doi.org/10.1016/j.mejo.2008.06.046
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score 13.222552